Performance of Sensitivity of Direct Detection Optical Receiver Incorporating MOSFET-Based Transimpedance-Type Amplifier

Authors

  • Abdulgaffar Swailim Muhawwis Electrical & Electronic Department College of Engineering University of Thi-Qar

DOI:

https://doi.org/10.31663/

Keywords:

MOSFET, transimpedance amplifier, optical receiver, sensitivity, optical receiver noise, transconductance.

Abstract

Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) offer many
advantages due to their low noise and high associated gain at microwave frequencies.
Therefore, they are well suited to the amplifier requirements of broadband light-wave
receivers, through providing a high dynamic range and wide bandwidths.
In this work, the performance of integrated optical receiver consisting of PINphotodiode
and
MOSFET-based
transimpedence
type
amplifier
is
analyzed.
The
effect
of various
device
parameters
on
receiver
performance
is
investigated
in
details.
The
simulation results
show
that
the
sensitivity
(P
) of an optical receiver is approximately constant if it is
based on well-designed MOSFET.
sen

Downloads

Published

2010-12-01

Issue

Vol. 1 No. 2 (2010)

Section

Articles

License

Copyright (c) 2010 The Author(s), under exclusive license to the University of Thi-Qar

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Performance of Sensitivity of Direct Detection Optical Receiver Incorporating MOSFET-Based Transimpedance-Type Amplifier . (2010). University of Thi-Qar Journal for Engineering Sciences, 1(2), 116-128. https://doi.org/10.31663/