Performance of Sensitivity of Direct Detection Optical Receiver Incorporating MOSFET-Based Transimpedance-Type Amplifier

Abstract

Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) offer many
advantages due to their low noise and high associated gain at microwave frequencies.
Therefore, they are well suited to the amplifier requirements of broadband light-wave
receivers, through providing a high dynamic range and wide bandwidths.
In this work, the performance of integrated optical receiver consisting of PINphotodiode
and
MOSFET-based
transimpedence
type
amplifier
is
analyzed.
The
effect
of various
device
parameters
on
receiver
performance
is
investigated
in
details.
The
simulation results
show
that
the
sensitivity
(P
) of an optical receiver is approximately constant if it is
based on well-designed MOSFET.
sen